Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1985-06-07
1986-12-09
Church, Craig E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504421, A61K 2702, G21K 500, H01J 3700
Patent
active
046282092
ABSTRACT:
Method and apparatus for obtaining absolute spatial intensity distribution of a beam of particles in ion implanters. The invention is particularly applicable to ion implanters in which device wafers are mounted on the face of a disk which is rotated, and may be translated, in front of an implanting beam. A spiral pattern of appropriately shaped holes is formed in a spinning disk that holds the wafers. The fluence density of the beam passing through each hole is a precise measure of the fluence density of the particles striking the device wafer at the radial position of the hole. Thus, a measure of the absolute number of particles, and the spatial distribution of those particles is obtained. The invention is useful for beam diagnostics, for quality control of the implantation and for the control over variable intensity implanted ions.
REFERENCES:
patent: 4228358 (1980-10-01), Ryding
patent: 4234797 (1980-11-01), Ryding
patent: 4419584 (1983-12-01), Benveniste
patent: 4517465 (1985-05-01), Gault et al.
patent: 4587433 (1986-05-01), Farley
A New Dose Control Technique for Ion Implantation--Ryding et al.
The Effect of Ion Implanter Design Upon Implant Uniformity--Wittkower.
Church Craig E.
Eaton Corporation
Grace C. H.
Grigsby T. N.
Sajovec F. M.
LandOfFree
Particle implantation apparatus and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Particle implantation apparatus and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Particle implantation apparatus and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1386641