Particle detector for detecting ionizing particles having a pote

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

25037014, 257458, H01J 4014

Patent

active

053591860

ABSTRACT:
A particle detector for detecting ionizing particles incident on the detector which form electron-hole pairs upon penetrating the detector, the detector comprising a substrate, a first electrode formed on the substrate, a body portion supported by the first electrode, a second electrode formed over the body portion, and a voltage source for applying a forward bias voltage across the first and the second electrodes. The body portion includes two monolithic, contiguous amorphous silicon regions. A first region is doped to be of a first conductivity type, and a second region is an intrinsic region. The applied forward bias voltage must be greater than the flat band voltage of the detector and sufficient to bias the detector into the space charge limited regime so that charge carriers, injected at the first electrode, are blocked by a potential barrier formed near the interface between the first and the second regions. When an ionizing particle penetrates the detector, the hole (or electron) formed thereby moves towards and modulates the potential barrier to allow previously blocked charge carriers to pass over the barrier, to move across the detector and to be collected by the second electrode to provide an enhanced signal in response to the ionizing particle. The ratio of carriers, so produced, to ionizing particles (i.e. the gain) can exceed 1000.

REFERENCES:
patent: 4586068 (1986-04-01), Petroff et al.
patent: 4714824 (1987-12-01), Terazono
patent: 4739383 (1988-04-01), Maruska et al.
patent: 4962304 (1990-10-01), Stapelbroek et al
patent: 5030831 (1991-07-01), Coon et al.
Marusaka; "Optically Controlled Amorphous Silicon Photosensitive Device"; IEEE Transistor Electronic Devices vol. ED-32 pp. 1343-1345, (1984).
Crandal; "Photoconductivity and Transport in Hydrogenated Amorphous Silicon"; Solar Cells, pp. 319-330 (1980).
Crandal; "Semiconductors and Semimetals"; vol. 21, Part B, Chapter 8, Academic Press Inc. (1984); pp. 245-247 & 264-297.
R. A. Street, "Measurements of Depletion Layers . . . ", Physical Review B, vol. 27, No. 8, 4924 (1983); pp. 4924-4932.
Hack et al., "Amorphous Silicon Photoconductive Diode", Applied Physics Letter, 54(2), (1989), pp. 96-98.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Particle detector for detecting ionizing particles having a pote does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Particle detector for detecting ionizing particles having a pote, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Particle detector for detecting ionizing particles having a pote will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-137401

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.