Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-03-28
2010-10-05
Vanore, David A (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492300, C250S493100, C250S251000, C607S001000, C607S002000
Reexamination Certificate
active
07807982
ABSTRACT:
It is an object of the present invention to provide a charged particle beam extraction method and particle beam irradiation system that make it possible to exercise intensity control over an extracted ion beam while a simple device configuration is employed. To accomplish the above object, there is provided a particle beam irradiation system comprising: a synchrotron for accelerating and extracting an charged particle beam; an irradiation apparatus for extracting the charged particle beam that is extracted from the synchrotron; first beam intensity modulation means for controlling the beam intensity of the charged particle beam extracted from the synchrotron during an extraction control period of an operation cycle of the synchrotron; and second beam intensity modulation means for controlling the beam intensity during each of a plurality of irradiation periods contained in the extraction control period of the operation cycle.
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Proceedings of the Seventh Symposium on Accelerator and Related Technology for Application, Jun. 9-10, 2005, Tokyo, Japan, pp. 35-36.
Nishiuchi Hideaki
Saito Kazuyoshi
Hitachi , Ltd.
Mattingly & Malur, P.C.
Vanore David A
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