Particle beam accelerator

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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Details

328233, 250398, H01J 37317

Patent

active

043831800

ABSTRACT:
An ion beam implanter includes a high energy accelerator having N electrodes equally spaced along the path of an ion beam, where N is an integer greater than 2. A resistor voltage divider has N terminals respectively connected to the N electrodes. Resistances of the divider between adjacent ones of the electrodes have the same value. A variable DC voltage source applies a high positive voltage to terminal N of the divider, while the first terminal of the divider is grounded. Terminal N is connected to an electrode that is upstream of the electrode connected to the first terminal. A shorting bar is dimensioned and positioned to selectively engage terminals N, (N-1 . . . 1. Drive means stepwise moves the shorting bar so an end portion of the bar sequentially engages terminals N, (N-1) . . . 1 in order. The remainder of the bar engages terminals N, (N-1) . . . (a+1) while the bar end portion engages terminal a, where a is selectively every integer from 1 to N. The stepwise movement of the shorting bar is synchronized with variations of the DC source to maintain a substantially constant voltage gradient along the length of the unshorted electrodes despite variations in energy applied to the beam by the accelerator. The drive means includes a pneumatically activated motor having rods with differences in length between fully extended and fully retracted positions thereof in binary relationship with the distance between adjacent ones of the N electrodes.

REFERENCES:
patent: 3710163 (1973-01-01), Bomko et al.

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