Partially storing control circuit used in a memory unit

Static information storage and retrieval – Magnetic bubbles – Guide structure

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36523003, 36518905, 3642568, 3642549, 364DIG1, G06F 1200, G06F 1204, G11C 800

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active

052069427

ABSTRACT:
Partial-store access in which a portion of data is changed, is performed using a plurality of memory banks in a memory unit. The partial store-access is performed through an interleave method in which read-data which is one word in length is read from the memory banks during an access time. The one word write-data including a portion of data which is to be changed, is registered in store-data registers. The portion of data is changed in an overwriting operation within the access time. When more than one portion of data is to be changed, such portion is also changed within the access time, but within a different register (i.e., at a later time) than the portion of the storing data initially changed. A positional signal indicating the position of the storing data which is to be changed, is stored in position-signal registers. The portions of the storing data which have been changed are combined using the positional signals, with the one word read-data read from the memory banks, thus producing rewrite-data after the access time. The rewrite-data is then restored in the memory banks.

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Patent Abstracts of Japan, vol. 11, No. 219 (p. 596) (2666) Jul. 16, 1987 & JP-A-62 038 953 (Fujitsu Ltd), Feb. 19, 1987.

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