Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device
Reexamination Certificate
2005-02-22
2005-02-22
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
C257S104000, C257S530000
Reexamination Certificate
active
06858883
ABSTRACT:
A memory system, including a first electrode, a memory storage element, and a control element. The control element having a breakdown voltage. The breakdown voltage is increased by partially-processing the control element. In one aspect, the partial-processing results by processing the control element for a briefer duration than the memory storage element. In another aspect, the partial-processing results by forming the control element from a plurality of layers, some of the plurality of layers are unprocessed while other ones of the plurality of layers are fully processed.
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Fricke Peter J.
Nickel Janice H.
Van Brocklin Andrew L.
Hewlett--Packard Development Company, L.P.
Nelms David
Nguyen Thinh T
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