Partially pinned photodiode for solid state image sensors

Details Partially pinned photodiode for solid state image sensors Partially pinned photodiode for solid state image sensors

1998-10-01

2000-04-18

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

438 57, 438309, 257292, 257233, H01L 2100, H01L 31062

Patent

active

060514477

ABSTRACT:
A pixelated image sensor having comprising a partially pinned photodiode which is formed a semiconductor of a first conductivity type formed on a surface of the sensor with at least one photodiode formed, within the semiconductor near the surface, the photodiode being formed from a second conductivity type opposite the first conductivity type; a pinning layer formed on the surface over at least a portion of the photodiode creating a pinned photodiode region, the pinning layer being formed from the first conductivity type; and an unpinned region formed near the surface in an area outside the portion used to form the pinning layer, the unpinned region is formed as a floating region that is employed as a capacitor. The partially pinned photodiode is useful in expanding the fill factor of photodetectors employing photodiode technology.

REFERENCES:
patent: 5583071 (1996-12-01), Stevens et al.
patent: 5625210 (1997-04-01), Lee et al.

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