Partial one-shot electron beam exposure mask and method of formi

Details Partial one-shot electron beam exposure mask and method of formi Partial one-shot electron beam exposure mask and method of formi

1998-02-05

2000-02-01

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, G03F 900

Patent

active

060200928

ABSTRACT:
A partial one-shot exposure mask is provided for exposure, by repeating the patterns, of a photo-resist formed over active and isolation regions of a semiconductor device, wherein boundaries of patterns of the partial one-shot exposure mask are positioned only in the isolation region. The patterns of the partial one-shot exposure mask may be for formation of word lines. In this case, the boundaries of the patterns of the partial one-shot exposure mask may be formed in a direction perpendicular to a longitudinal direction of the word lines. Alternatively, the boundaries of the patterns of the partial one-shot exposure mask may be formed in a direction parallel to an active region. All of regions for formations of contact holes are included in the active region.

REFERENCES:
patent: 5849437 (1998-12-01), Yamazaki et al.

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