Partial local self-boosting of a memory cell channel

Details Partial local self-boosting of a memory cell channel Partial local self-boosting of a memory cell channel

2009-03-19

2010-12-07

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185250

Reexamination Certificate

active

07848146

ABSTRACT:
A method for partial local self-boosting of a memory cell channel is disclosed. As a part of memory cell channel partial local self-boosting, an isolating memory cell located on a source side of a program inhibited memory cell is turned off and a gating memory cell located on a drain side of the program inhibited memory cell is used to pass a pre-charge voltage to the program inhibited memory cell to provide a pre-charge voltage to a channel of the program inhibited memory cell. Moreover, a pre-charge voltage is passed to a buffering memory cell located on the source side of the program inhibited memory cell to provide a pre-charge voltage to a channel of the buffering memory cell and the gating memory cell that is located on the drain side of the program inhibited memory cell is turned off. During programming, a program voltage is applied to the gate of the program inhibited memory cell where a channel voltage of the program inhibited memory cell is raised above a level raised by the pre-charge voltage.

REFERENCES:
patent: 7450430 (2008-11-01), Hemink et al.
patent: 7468918 (2008-12-01), Dong et al.
patent: 7639540 (2009-12-01), Kim et al.

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