Partial edge bead removal to allow improved grounding during...

Details Partial edge bead removal to allow improved grounding during... Partial edge bead removal to allow improved grounding during...

2006-01-17

2008-03-04

Culbert, Roberts (Department: 1763)

Etching a substrate: processes

Forming or treating mask used for its nonetching function

C430S005000

Reexamination Certificate

active

07338609

ABSTRACT:
A method to provide a ground point for second, or subsequent, e-beam mask-writing steps by selectively removing the photoresist edge bead of a photomask substrate to expose the underlying chrome layer. The selective removal leaves at least one tab of photoresist edge bead over the chrome layer. After the first e-beam mask writing step and subsequent etch, the tab can be removed to expose a portion of the chromium layer that can act as a new ground point for a second e-beam etch. Also, a nozzle for use in selectively removing the edge bead to leave a tab of photoresist edge bead.

REFERENCES:
patent: 5804336 (1998-09-01), Rolfson
patent: 6261427 (2001-07-01), Rolfson
patent: 6830853 (2004-12-01), Tzu et al.
patent: 6986850 (2006-01-01), Rolfson
patent: 2005/0032003 (2005-02-01), Lin
patent: 5289309 (1993-11-01), None

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