Partial clean fluorine thermal cleaning process

Details Partial clean fluorine thermal cleaning process Partial clean fluorine thermal cleaning process

1997-02-18

1999-02-09

Breneman, R. Bruce

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 60, 216 79, B08B 600, C25F 100

Patent

active

058688528

ABSTRACT:
A method for the dynamic cleaning of semiconductor fabrication equipment and particularly quartzware with a thermally activated source of fluorine, such as nitrogen trifluoride, at an elevated temperature, typically at the process operation temperature, wherein the cleaning is terminated prior to complete cleaning and removal of undesired substances allowing rapid restart of fabrication equipment so cleaned.

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"Silicon Processing for the VLSI Era: vol. 1: Process Technology"; Wolf et al. ; Lattice Press; Sunset Beach, Ca; .COPYRGT. 1986; ISBN: 0-961672-3-7; p. 567.
"In Situ Cleaning of Silicon Nitride (Si.sub.3 N.sub.4) Process Quartzware Using a Thermal Nitrogen Trifluoride (NF.sub.3) Etch Process", Sematech Technology Transfer 96083161A-TR (Sep. 30, 1996) by A. D. Johnson, et al.

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