Part for ion implantation device

Details Part for ion implantation device Part for ion implantation device

1997-07-30

1999-04-06

Anderson, Bruce

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 3730

Patent

active

058922369

ABSTRACT:
A part for an ion implantation device employing a silicon carbide sintered body is provided. The density of the silicon carbide sintered body is 2.9 g/cm.sup.3 or more. The silicon carbide sintered body is obtained by sintering a mixture in which silicon carbide powder and a non-metal-based sintering additive are mixed uniformly. The non-metal-based sintering additive is formed of an organic compound which generates carbon upon heating or the like. As a result, a part for an ion implantation device with excellent heat resistance and ion resistance and which causes little contamination is provided.

REFERENCES:
patent: 4209474 (1980-06-01), Prochazaka
patent: 4569922 (1986-02-01), Suzuki

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