Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1996-10-16
1999-08-03
Nguyen, Vinh P.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
324765, G01R 3122
Patent
active
059330201
ABSTRACT:
A device and method for determining parasitic resistances in a metal oxide silicon field effect transistor (MOSFET). In one embodiment of the present invention, respective total resistances between a plurality of pairs of varyingly spaced apart first contacts of a first test structure are measured. The contact resistance between the plurality of first contacts and a first silicided region and a sheet resistance per unit length of the first silicided region are calculated from the previously measured respective total resistances. Next, respective total resistances between a plurality of pairs of varyingly spaced apart second contacts of a second test structure are measured. The present invention then calculates from the previously measured respective total resistances various resistance components contributing to a total resistance between any pair of the plurality of second contacts. The present invention then subtracts, from the total resistance between any two of the plurality of second contacts, the contact resistance between the plurality of first contacts and the first silicided region and the sheet resistance per unit length of the first silicided region. In so doing, the present invention determines the contact resistance between each of a plurality of second silicided regions and a respective adjacent lightly doped drain region. The present invention also determines a sheet resistance across any one of the respective lightly doped drain regions.
REFERENCES:
patent: 3889188 (1975-06-01), Trindade
patent: 4542340 (1985-09-01), Chakravati et al.
patent: 4942357 (1990-07-01), Chang
Nguyen Vinh P.
VLSI Technology Inc.
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