Amplifiers – Parametric amplifiers
Reexamination Certificate
1999-12-16
2001-08-28
Pascal, Robert (Department: 2817)
Amplifiers
Parametric amplifiers
C330S004600
Reexamination Certificate
active
06281746
ABSTRACT:
BACKGROUND OF THE INVENTION
In certain fields of use, such as missiles and aircraft, microwave energy is utilized for such purposes as radar and communication. However, as greater levels of energy are needed for these signals, problems of weight, volume and expense are encountered for the electronic equipment needed to produce the required signals. Further, there are limitations for the amount of power available for the generation of these signals. Thus, there exists a need for methods and apparatus to produce microwave signals at desired energy levels by using as little energy and hardware as possible.
SUMMARY OF THE INVENTION
A selected embodiment of the present invention is a microwave parametric amplifier which includes a housing having an interior cavity. A circulator is connected to the housing. The circulator has an input signal port for receiving an input signal, an output signal port and a bidirectional transfer port which is coupled to the interior cavity of the housing. A pump signal port is coupled to the interior cavity of the housing for receiving a pump signal. A non-linear medium is positioned within the interior cavity for receiving the pump signal and thereby liberating carriers within the medium. A frequency selective barrier within the interior cavity substantially reflects the pump signal and is substantially transparent to the input signal. The frequency selective barrier defines a pump signal resonant cavity within the housing interior cavity. An output signal is produced within the interior cavity as a result of interaction of the input signal and the carriers in the non-linear medium. The output signal is conveyed through the bidirectional port to the circulator and to the output port of the circulator. The output signal is an amplified version of the input signal having the same frequency as the input signal but at a greater amplitude.
REFERENCES:
patent: 3290619 (1966-12-01), Geusic et al.
patent: 3379956 (1968-04-01), Battles et al.
patent: 3628186 (1971-12-01), Rumson et al.
patent: 3631331 (1971-12-01), Fairley et al.
patent: 3742335 (1973-06-01), Konishi
patent: 3772528 (1973-11-01), Anderson
patent: 3944950 (1976-03-01), Jacobs et al.
patent: 3963977 (1976-06-01), Mitsui
patent: 4527137 (1985-07-01), Hartley
patent: 4595892 (1986-06-01), Martinetti et al.
patent: 4636758 (1987-01-01), Mettoudi
patent: 4712121 (1987-12-01), Yokoyama
patent: 4782222 (1988-11-01), Ragle et al.
patent: 4996505 (1991-02-01), Keilmann
patent: 5278427 (1994-01-01), Choi
patent: 5422613 (1995-06-01), Nativ
patent: 5731752 (1998-03-01), Wood
patent: 5796314 (1998-08-01), Tantawi et al.
patent: 5796902 (1998-08-01), Bhat et al.
patent: 5880921 (1999-03-01), Tham et al.
Stephan Ohr, “Darpa Sows Seeds of a Telecom Revolution,”EE Times,Aug. 4, 1997, p. 1.
F.M. Mueller, et al “HTS Microwave Cavity with Temperature-Independent Frequencies,”IEEE Transactions on Applied Superconductivity,vol. 5, No. 2, Jun. 1995, pp 1983-1986.
C.J. Maggiore, et al, “Low-loss Microwave Cavity Using Layered-dielectric Materials,” Appl. Phys. Lett 64 (11) Mar. 14, 1994.
E. Yablonovitch, “Photonic Band-gap Structures,” Journal of the Optical Society of America Bulletin, vol. 10, No. 2, Feb. 1993, pp. 283-295.
Henry O. Everitt, “Applications of Photonic Band Gap Structures,”Optics and Photonics News,Nov. 1992, pp 20-23.
“Application Notes for Bulk Window™ Waveguide Switch Elements,” M/A Com Semiconductor Products Operation, Burlington, MA 01803, pp 3-3 through 3-8.
N.C. Luhmann, Jr. High Power, High Efficiency, Monolithic Quasi-Optical Frequency Triplers Using Microwave Power Module Drivers, Feb. 27, 1996.
Joy Yi-Yin Liao, “Frequency Multipliers for Millimeter Wave Applications,” Riken Review, No. 11, Dec. 1995, pp5-6.
J. Grenzer, et al, “Frequency Multiplication of Microwave Radiation in a Semiconductor Superlattice by Electrons Capable to Perform Bloch Oscillations,” Annalen der Physik, Apr. 1995, pp 265-271.
K.N. Ostricov, et al, “Resonant Second Harmonics Generation of the Submillimeter Surface Wave in the Semiconductor Superlattice Bounded by a Metal,” IEEE Antennas and Propagation Society Int'l Symposium, 1995 Digest, vol. I, pp 742-745.
D. Lippens, “Quantum Well Devices for Millimetre Wave Applications,” 23rdEuropean Microwave Conference, Madrid, Spain, Sep. 1993, pp 61-66.
M. Hadjazi, et al “60 GHz Reflection Gain Based on Superlattice Negative Differential Conductance,”Electronics Letters,Apr. 15, 1993, vol. 29, No. 8.
Wen-Shiung Lour, “Multi-state Superlattice-Emitter Resonant-Tunneling Bipolar Transistor with Circuit Applications,”Superlattices and Microstructures,1993, Academic Press Ltd., pp 81-86.
Federico Capasso, “Quantum Effect Devices: Physics and Applications,” edited by Anastassakis & Joannopoulos, 20thInternational Conference on The Physics of Semiconductor, Aug. 1990, pp 379-386.
A.Y. Cho, “Current State and Future Challenge in Molecular Beam Epitaxy (MBE) Research,” Molecular Beam Epitaxy 1988, Sapporo, Japan, Reprinted fromJournal of Crystal Growth,95 (1989) Nos. 104, pp 1-10.
Tohru Takada et al, “Frequency Triplers and Quadruplers with GaAs Schottky-Barrier Diodes at 450 and 600 GHz,” IEEE Transactions on Microwave Theory and Techniques, vol. MTT-27, No. 5, May 1979, pp 519-523.
L.A. Blackwell et al, “Semiconductor-Diode Parametric Amplifiers,” Prentice-Hall Inc., 1961, pp 57-60 and 101-121.
Lockheed Martin Corporation
Nguyen Patricia T.
Pascal Robert
Sadacca Stephen S.
Sidley Austin Brown & Wood
LandOfFree
Parametric cavity microwave amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Parametric cavity microwave amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Parametric cavity microwave amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2506846