Parameter independent FET sense amplifier

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307235H, 307238, 307DIG3, 340173CA, H03K 520, H03K 518, H03K 3286, G11C 1140

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active

039939170

ABSTRACT:
A high speed ratioless FET sense amplifier for sensing stored information in a semiconductor memory system. The amplifier is capable of sensing very small voltage signals provided by charges stored in a plurality of single FET/capacitor memory cells. The amplifier comprises a pair of cross-coupled FET devices coupled to a pair of bit/sense lines by clock signal responsive switching devices. The source electrodes of the cross-coupled FETs are each independently capacitively coupled to another clock signal and also to a source of low potential through a pair of clock driven source pull-down FETs. The amplifier uses minimal size devices and is process parameter independent.

REFERENCES:
patent: 3549912 (1970-12-01), Lewis
patent: 3678473 (1972-07-01), Wahlstrom
patent: 3774176 (1973-11-01), Stein et al.
patent: 3882326 (1975-05-01), Kruggel
patent: 3892984 (1975-07-01), Stein
furman, "Sense Latch Circuit for Memory Cells"; IBM Tech. Discl. Bull.,vol. 16, No. 9, pp. 2792-2793, 2/1974.
West, "Practical Circuit Design Using M.O.S."; Design Electronics (publication) pp. 30-32 & 37-38; 3/1971.
Spampinato, "Differential Sense Amplifier"; IBM Tech. Discl. Bull.; vol. 17, No. 6; pp. 1797-1798; 11/1974.

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