Parameter extraction apparatus using MISFET devices of different

Details Parameter extraction apparatus using MISFET devices of different Parameter extraction apparatus using MISFET devices of different

1994-04-26

1996-02-20

Wieder, Kenneth A.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

G01R 104

Patent

active

054932386

ABSTRACT:
In a device parameter extracting apparatus, a set of drain currents I.sub.D (i,j) is measured from each of a plurality of MISFET devices of different gate lengths L(i) by successively applying gate voltages V.sub.G (i,j) to each of the MISFET devices for a predetermined drain voltage, where i identifies each of the MISFET devices and j is an integer. A set of drain currents I.sub.D (i,k) is interpolated from the measured drain currents I.sub.D (i,j) such that the interpolated drain currents correspond respectively to predetermined ones of voltage differences V.sub.G (i,j)-V.sub.TH (i), where k is an integer and V.sub.TH (i) is a threshold voltage of each of the MISFET devices. A set of regression lines R(k)=a(k)L(i)+b(k) is derived in a coordinate space from a set of relationships between V(k)/I.sub.D (i,k) and the gate lengths L(i) of the devices, where a(k) and b(k) are constants, where V(k) represents the predetermined ones of voltage differences. From the constants a(k) and b(k) is derived a coordinate point of the space which corresponds to an intersection of the regression lines.

REFERENCES:
patent: 5233291 (1993-08-01), Kouno et al.

Affiliated with

Also associated with

Rating

Parameter extraction apparatus using MISFET devices of different does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Parameter extraction apparatus using MISFET devices of different, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Parameter extraction apparatus using MISFET devices of different will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1358362