Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2005-10-31
2011-11-01
Kelly, Cynthia (Department: 1722)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C430S942000
Reexamination Certificate
active
08048600
ABSTRACT:
A parameter extracting method capable of accurately and effectively extracting parameters used for charged particle beam exposure. The method comprises the steps of forming an unknown parameter layer on a known parameter layer, forming a resist on the unknown parameter layer, subjecting the resist to exposure through patterns changed in an existing range, and extracting parameters of the unknown parameter layer using the exposure result. In the parameter extraction method, parameters of layers lower than the unknown parameter layer are known. Therefore, layer combinations to be considered and the number of experimental data can be drastically reduced. After parameter extraction of the unknown parameter layer, an unknown parameter layer is newly formed on the layer. Then, the parameter thereof is extracted in the same manner. Thus, the parameter is extracted sequentially from lower layers and therefore, the parameter in the multitiered structure having various layer combinations can be accurately and effectively extracted.
REFERENCES:
patent: 2003-218014 (2003-07-01), None
patent: 2005-101501 (2005-04-01), None
English translation of JP Publication 2003-218014, Jul. 2003.
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Kelly Cynthia
Raymond Brittany
LandOfFree
Parameter extracting method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Parameter extracting method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Parameter extracting method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4299236