Parameter adjustment method, semiconductor device...

Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Manufacturing optimizations

Reexamination Certificate

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C716S050000, C716S052000

Reexamination Certificate

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07934175

ABSTRACT:
A parameter adjustment method for a plurality of manufacturing devices to form a pattern of a semiconductor device on a substrate using the manufacturing devices includes: adjusting a parameter adjustable for a manufacturing device serving as a reference manufacturing device; obtaining a first shape of a pattern of a semiconductor device to be formed on a substrate; defining an adjustable parameter of another to-be-adjusted manufacturing; obtaining a second shape of the pattern formed on the substrate; calculating a difference amount between a reference finished shape and a to-be-adjusted finished shape; repeatedly calculating the difference amount by changing the to-be-adjusted parameter until the difference amount becomes equal to or less than a predetermined reference value; and outputting as a parameter of the to-be-adjusted manufacturing device the to-be-adjusted parameter.

REFERENCES:
patent: 6711452 (2004-03-01), Ogawa
patent: 7242459 (2007-07-01), Shi et al.
patent: 7266800 (2007-09-01), Sezginer
patent: 7685543 (2010-03-01), Tsuji et al.
patent: 2003/0139833 (2003-07-01), Pierrat et al.
patent: 2005/0004774 (2005-01-01), Volk et al.
patent: 2005/0273753 (2005-12-01), Sezginer
patent: 2006/0068301 (2006-03-01), Hirukawa
patent: 2007/0265725 (2007-11-01), Liu et al.
patent: 2006-229042 (2006-08-01), None
patent: 2007-059906 (2007-03-01), None
Notification of Reasons for Rejection mailed by the Japanese Patent Office on Jul. 31, 2009, for Japanese Patent Application No. 2007-099187, and English-language translation thereof.

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