Parallel scan type ion implanter

Details Parallel scan type ion implanter Parallel scan type ion implanter

1996-03-13

1998-11-17

Pascal, Robert J.

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Electron or ion source

250423R, H01J 724

Patent

active

058381120

ABSTRACT:
A parallel scan type ion implanter comprising multipole electrostatic deflectors and designed to produce an even and uniform dose distribution on the entire area of the substrate by maintaining the moving speed of the ion beam spot constant on the substrate is characterized in that it holds the rate of raising or lowering the deflection voltage stepwise along the vertical direction (Y-direction) constant and the manner of varying the rate of changing the deflection voltage along the horizontal direction (X-direction) with time as the function of the location of the moving beam spot on the substrate determined by the dimensional parameters of the multipole electrostatic deflectors assuming that the rate is normalized by the rate of changing the deflecting voltage when the beam spot passes the center of the substrate.

REFERENCES:
patent: 4870284 (1989-09-01), Hashimoto et al.

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