Parallel readout stratified channel CCD

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 30, 307221D, H01L 2978, H01L 2714, H01L 3100, G11C 1928

Patent

active

042662346

ABSTRACT:
A parallel readout stratified channel CCD includes a plurality of parallel spaced apart charge transfer channels lying in a semiconductor substrate. A barrier region lies under and adjacent to all the charge transfer channels and their separating regions. A charge integration channel lies under and adjacent to the barrier region. The substrate and barrier region have dopant of atoms of a first type; while a charge integration channel has dopant of atoms of a second type opposite to the first type. An insulating layer overlies the charge transfer channel, and a plurality of phase electrodes are serially disposed thereon transversely to all of the charge transfer channels. Further included are interchannel transfer regions under selected portions of predetermined ones of the electrodes. These enable localized interchannel charge transfer. In operation, charge packets are selectively transferred from particular portions of the charge integration channel to the parallel charge transfer channels; and are subsequently read in parallel therefrom.

REFERENCES:
patent: 3739240 (1973-06-01), Krambeck
patent: 3852799 (1974-12-01), Walden
patent: 3852801 (1974-12-01), Itoh et al.
patent: 3864722 (1975-02-01), Carnes
patent: 4032952 (1977-06-01), Ohba et al.

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