Parallel plate reactor and method of use

Details Parallel plate reactor and method of use Parallel plate reactor and method of use

1991-01-18

1993-05-11

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 118723, H01L 2100

Patent

active

052098036

ABSTRACT:
A parallel plate reactor having a grounded grid disposed between an RF powered electrode and a grounded electrode upon which a substrate is disposed. A method of utilizing the above apparatus consists of etching the substrate using a composition of 30-100% NF.sub.3 (nitrogen trifluoride) at 25 SCCM (standard cubic centimeter per minute) and 0-70% He (helium) at 75 SCCM to etch a layer of PECVD (plasma enhanced chemical vapor deposition) Si.sub.3 N.sub.4 (silicon nitride). The etching takes place at 200 mtorr to 5 torr pressure and 50-400 watts RF power.

REFERENCES:
patent: 4680086 (1987-07-01), Thomas et al.
patent: 4792378 (1988-12-01), Rose et al.
patent: 4971653 (1990-10-01), Powell et al.
patent: 5015331 (1991-05-01), Powell

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