Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-07-11
2006-07-11
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S491100
Reexamination Certificate
active
07075093
ABSTRACT:
A maskless, direct write electron lithography apparatus for accurately and simultaneously writing plural sub-micron patterns on a silicon substrate employs plural parallel electron beams with precise X-Y mechanical translation of the substrate to provide low cost, high throughput integrated circuit (IC) fabrication. Plural compact micro electron gun assemblies arranged in an I×J rectangular grid each simultaneously expose one IC pattern on the substrate, with each electron gun assembly including a K×L array of individually controlled electron guns emitting K×L electron beams. The regular, small spacing between electron beams in each array, i.e., approximately 1 mm or less, requires a correspondingly small X-Y translation of the substrate to write the entire wafer. Each electron gun array includes plural AC blanked cathodes and DC biased plates having plural aligned beam passing apertures. A computer controlled pattern generator synchronized with wafer X-Y translation controls the duration and timing of the cathode blanking signals.
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Chen Hsing-Yao
Gorski Richard M.
Rozansky Boris
Emrich & Dithmar LLC
Leybourne James J.
Wells Nikita
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