Parallel ion optics and apparatus for high current low energy io

Radiant energy – Fluent material containment – support or transfer means – With irradiating source or radiating fluent material

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Details

250423R, 25049221, 250281, 250283, 427523, 118723FI, G01N 2101, H01J 2700, B01D 5944, C23C 1400

Patent

active

058118209

ABSTRACT:
A device for the parallel processing of ions is provided. The device may be utilized for thin film deposition or ion implantation and may include the following: an ion source, ion capture and storage ion optics, mass selection ion optics, neutral trapping elements, extraction ion optics, beam neutralization mechanisms, and a substrate on which deposition and thin film growth occurs is provided. Ions are captured and stored within a closely packed array of parallel ion conducting channels. The ion conducting channels transport high current low energy ions from the ion source to irradiate the substrate target. During transport, ion species can be mass selected, merged with ions from multiple sources, and undergo gas phase charge exchange ion molecule reactions. Additionally, neutrals from the ion source, ion-molecule reaction reagent gases, residual background gas, or neutralization of ions may be eliminated from the processing stream by turbo pumping, cryo pumping, and cryocondensation on some of the ion optic elements. Different types of ion optic elements, including elements which are parallel or perpendicular to the ion path, and neutral trapping elements may be combined in different ways to achieve thin film ion deposition over a large homogenous substrate surface.

REFERENCES:
patent: 3847115 (1974-11-01), Tashbar
patent: 4901667 (1990-02-01), Suzuki et al.
patent: 5284544 (1994-02-01), Mizutani et al.
patent: 5423936 (1995-06-01), Tomita et al.
patent: 5496410 (1996-03-01), Fukuda et al.
patent: 5518572 (1996-05-01), Kinoshita et al.

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