Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1998-07-22
2000-04-04
Pascal, Robert
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330269, 330276, 330307, H03F 316, H03F 326, H03F 314
Patent
active
060466413
ABSTRACT:
A high power grounded-drain source follower RF amplifier circuit employs a high voltage MOSFET. The RF signal at the input is applied with respect to ground via an isolation transformer whose secondary feeds the signal between gate and source. The output is taken from the source with respect to drain, which is grounded. A 13.56 MHz 3 KW power amplifier topology with isolated RF input drive for each MOSFET die uses a pair of kilowatt power transistors or KPTs, in which there are multiple large area MOSFET dies, with the drain regions of the dies being formed over a major portion of the die lower surface. The drain regions are in direct electrical and thermal contact with the conductive copper flange. The source and gate regions are formed on the dies away from the flat lower surface. One or more pairs of multi-chip KPTs can be configured to design stable 2.5 KW, 5 KW and 10 KW RF plasma generators at 13.56 MHz. The generators employ a low pass/high pass filter arrangement (diplexer) at the output for low harmonic distortion and dissipative harmonic termination. The terminated high pass filter reduces the gate-to-source differential RF voltage and protects the MOSFETS from damage.
REFERENCES:
patent: 4112386 (1978-09-01), Everhart et al.
patent: 4524328 (1985-06-01), Abou et al.
patent: 4531101 (1985-07-01), Pecukonis
patent: 4647867 (1987-03-01), Butler et al.
patent: 4667144 (1987-05-01), Jones et al.
patent: 4797630 (1989-01-01), Brown
patent: 4890073 (1989-12-01), Flahenecker et al.
patent: 5187580 (1993-02-01), Porter, Jr. et al.
patent: 5325258 (1994-06-01), Choi et al.
patent: 5420537 (1995-05-01), Weedon et al.
patent: 5629648 (1997-05-01), Pratt
patent: 5657218 (1997-08-01), Rilly et al.
patent: 5726603 (1998-03-01), Chawla et al.
Chawla Yogendra K.
Covert Craig A.
ENI Technologies Inc.
Nguyen Patricia T.
Pascal Robert
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