Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2007-02-27
2007-02-27
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Format or disposition of elements
C365S063000, C365S065000, C365S145000, C365S163000
Reexamination Certificate
active
10712205
ABSTRACT:
A series of address lines extend in a first direction through at least two layers of memory material spaced apart in the first direction. The memory material may be a ferroelectric polymer in one embodiment. The arrangement of lines and layers may increase the density of a memory in one embodiment.
REFERENCES:
patent: 5448110 (1995-09-01), Tuttle et al.
patent: 5969380 (1999-10-01), Seyyedy
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 2003/0185048 (2003-10-01), Fricke et al.
patent: 0073486 (1983-03-01), None
Andideh Ebrahim
Coulson Richard L.
Hur J. H.
Intel Corporation
Trop Pruner & Hu P.C.
LandOfFree
Parallel electrode memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Parallel electrode memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Parallel electrode memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3843487