Parallel capacitor of semiconductor device

Details Parallel capacitor of semiconductor device Parallel capacitor of semiconductor device

2007-11-27

2007-11-27

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S027000, C361S306100

Reexamination Certificate

active

11159733

ABSTRACT:
Disclosed herein is a parallel capacitor of a semiconductor device. According to the present invention, a first capacitor and a second capacitor are formed in different layers of the same region, wherein a metal layer connected to an upper electrode of the first capacitor is formed in the same layer as a metal layer connected to a lower electrode of the second capacitor. Thus, twp capacitors can be connected in parallel only with a metal layer composed of three layers. Accordingly, the present invention is advantageous in that it can reduce process steps for forming multiple metal layers, lower a step and cut manufacture cost.

REFERENCES:
patent: 5583359 (1996-12-01), Ng et al.
patent: 2004/0126981 (2004-07-01), Rao et al.
patent: 2005/0121744 (2005-06-01), Chang et al.

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