Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation
Reexamination Certificate
2008-05-13
2008-05-13
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Groove formation
C438S045000, C257SE21347
Reexamination Certificate
active
11027579
ABSTRACT:
A system and method for parallel-beam scanning a surface. An energetic beam source emits an energetic collimated beam which is received by an optical device, comprising: one or more optical media, operable to receive the emitted beam, such as two pairs of coordinated mirrors or a right prism, and at least one actuator coupled to the one or more optical media, and operable to rotate each of the one or more optical media around a respective axis to perform a parallel displacement of the beam in a respective direction, wherein the respective direction, the beam, and the respective axis are mutually orthogonal. The optical device is operable to direct the beam to illuminate a sequence of specified regions of a surface.
REFERENCES:
patent: 4214918 (1980-07-01), Gat et al.
patent: 4655850 (1987-04-01), Kakimoto et al.
patent: 4727381 (1988-02-01), Bille et al.
patent: 5436192 (1995-07-01), Epler et al.
patent: 6033741 (2000-03-01), Haruta et al.
patent: 6548796 (2003-04-01), Silvermintz et al.
patent: 6747245 (2004-06-01), Talwar et al.
patent: 6832724 (2004-12-01), Yavid et al.
patent: 2001/0002650 (2001-06-01), Warner et al.
patent: 2002/0086502 (2002-07-01), Liu et al.
patent: 2002/0122219 (2002-09-01), Funk
patent: 2002/0163704 (2002-11-01), Hayashi et al.
patent: 2004/0195337 (2004-10-01), Silverbrook et al.
“LaserMagic Productions Projection Systems”, Laser Magic Productions web page, © 1998, 5 pages.
Weiner et al., “Low Temperature Fabrication of p+ -n Diodes with 300-Å Junction Depth”, IEEE Electron Device Letters, vol. 13, No. 7, Jul. 1992.
Carey et al., “Fabrication of Submicrometer MOSFET's Using Gas Immersion Laser Doping (GILD)” IEEE Electron Device Letters, vol. EDL-7, No. 7, Jul. 1986.
MacCrisken John E.
Millar, legal representative Lynn
Warner, Jr. Raymond M.
Williams Mark S.
Chaudhari Chandra
Meyertons Hood Kivlin Kowert & Goetzel P.C.
Semicube, Inc.
LandOfFree
Parallel-beam scanning for surface patterning of materials does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Parallel-beam scanning for surface patterning of materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Parallel-beam scanning for surface patterning of materials will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3942285