Panel having thin film element formed thereon

Details Panel having thin film element formed thereon Panel having thin film element formed thereon

1992-06-23

1994-08-02

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 60, 257927, 359 87, H01L 2701

Patent

active

053348605

ABSTRACT:
An insulating substrate has thin film transistors, and scanning and data wires for supplying signals to the transistors. Each of the wires has a two-layered structure comprising a lower metal film and an upper metal film. Oxide films serving as etching stopper films and having a width smaller than each of the lower and upper metal films are interposed between the lower and upper metal films over the entire length thereof.

REFERENCES:
patent: 4720736 (1988-01-01), Takafuji et al.
patent: 4804953 (1989-02-01), Castleberry
patent: 4894690 (1990-01-01), Okabe et al.
patent: 5086347 (1992-02-01), Ukai et al.
patent: 5132745 (1992-07-01), Kwasnick et al.
patent: 5153754 (1992-10-01), Whetten
patent: 5168072 (1992-12-01), Moslehi
patent: 5177577 (1993-01-01), Taniguichi et al.
Patent Abstracts of Japan, vol. 10, No. 379 (E-465), Dec. 1986 JP-A-61 172 370 (Fujitsu).

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