Palladium thick film resistor containing boron nitride

Details Palladium thick film resistor containing boron nitride Palladium thick film resistor containing boron nitride

1992-09-02

1993-10-05

Bell, Mark L.

Stock material or miscellaneous articles

Composite

Of quartz or glass

106 114, 106 115, 106 128, 252514, 252521, 428434, B32B 900, H01B 102, C23C 2002, C23C 2000

Patent

active

052503585

ABSTRACT:
An electrically resistive film of the type used for forming thick film resistors is formed predominantly of palladium and includes an addition of boron nitride to increase resistance, preferably in combination with tantalum oxide. A paste of palladium powder and boron nitride powder dispersed in a vaporizable vehicle is applied to a substrate and sintered to form the film. In a preferred embodiment, the substrate is a ceramic powder compact that is concurrently sintered in a co-firing process.

REFERENCES:
patent: 3450545 (1969-06-01), Ballard et al.
patent: 4051074 (1977-09-01), Asada
patent: 4490318 (1984-12-01), Masuyama et al.
patent: 5019306 (1991-05-01), Huang et al.
Hoffman, L. C., "An Overview of Thick Film Hybrid Materials" Ceramic Bulletin, vol. 63, No. 4 (1984), pp. 572-576.
Melan et al., "The Glaze Resistor-Its Structure and Reliability", (publication and publication date notvailable).

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