Paired, separately controlled, and coupled or uncoupled stripe g

Details Paired, separately controlled, and coupled or uncoupled stripe g Paired, separately controlled, and coupled or uncoupled stripe g

1984-02-29

1986-08-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

046073701

ABSTRACT:
An integrated laser structure for paired stripe semiconductor lasers is provided with separate current control of each stripe laser. With optical coupling between the lasers, one of the lasers is operated below threshold and serves the longitudinal mode selection and tunability of the other laser, thereby to obtain a single longitudinal mode operation. Without coupling, the paired-laser structure operates as a source of two independent wavelengths.

REFERENCES:
patent: 4426704 (1984-01-01), Nagai et al.
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Hayakawa, et al., "Highly Reliable and Mode-Stabilized Operation in V-Channeled Substrate Inner Stripe Lasers on p-GaAs Substrate Emitting in the Visible Wavelength Region," J. Appl. Phys., 53(11), Nov. 1982, pp. 7224-7234.
Tsang, et al., "CW Multiwavelength Transverse-Junction-Stripe Lasers Grown by Molecular Beam Epitaxy Operating Predominantly in Single-Longitudinal Modes," Appl. Phys. Lett., 36(6), Mar. 15, 1980, pp. 441-443.
Boudama, et al., Electron. Lett., 18(20) Sep. 30, 1982, pp. 871-873, "Dual-Wavelength (GaAl)As Laser".
Tsang, et al., "High-Speed Direct Single-Frequency Modulation with Large Tuning Rate and Frequency Excursion in Cleaved-Coupled-Cavity Semiconductor Lasers," Appl. Phys. Lett., 42(8), Apr. 15, 1983, pp. 650-652.
Tsang, et al., "Single-Longitudinal Mode Performance Characteristics of Cleaved-Coupled-Cavity Lasers," Appl. Phys. Lett., 43(11), Dec. 1, 1983, pp. 1003-1005.
Choi, et al., "Semiconductor Internal-Reflection-Interference Laser," Appl. Phys. Lett., 40(7), Apr. 1, 1982, pp. 571-573.
Tsang, et al., "Transient Single-Longitudinal Mode Stabilization in Double Active Layer GaInAsP/InP Laser Under High-Bit Rate Modulation," Appl. Phys. Lett., 42(12), Jun. 15, 1983, pp. 1003-1005.

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