Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1984-08-15
1986-11-18
Niebling, John F.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
156345, 156643, 20419212, 20419232, C23C 1500, C23F 100
Patent
active
046234411
ABSTRACT:
A paired electrode for use in a plasma chamber. In one embodiment, the paired electrode comprises a plurality of angle members which are disposed parallel to one another. Pairs of the angle members are positioned facing one another, one functioning as a power electrode member and the other as a ground electrode member. All of the power electrode members are rigidly fastened to one another by means of a transverse power bus and all of the ground electrode members are rigidly fastened to one another by means of a transverse ground bus. The power bus and the ground bus are electrically connected to a power source, usually a RF power source and a ground of the plasma chamber, respectively. The plasma chamber contains a plurality of paired electrodes, and objects to be processed by plasma are placed between the paired electrodes.
REFERENCES:
patent: 4264393 (1981-04-01), Gorin et al.
patent: 4279216 (1981-07-01), Buhl et al.
patent: 4287851 (1981-09-01), Dozier
patent: 4289598 (1981-09-01), Engle
patent: 4292153 (1981-09-01), Kudo et al.
patent: 4328081 (1982-05-01), Fazlin
patent: 4381965 (1983-05-01), Maher, Jr. et al.
patent: 4424096 (1984-01-01), Kumagai
patent: 4425210 (1984-01-01), Fazlin
patent: 4461239 (1984-07-01), Cannella et al.
patent: 4496420 (1985-01-01), Frohlich et al.
Advanced Plasma Systems Inc.
Chapman Terryence
Niebling John F.
LandOfFree
Paired electrodes for plasma chambers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Paired electrodes for plasma chambers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Paired electrodes for plasma chambers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1616225