Page buffer for a programmable memory device

Details Page buffer for a programmable memory device Page buffer for a programmable memory device

2007-11-20

2007-11-20

Pham, Ly Duy (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S189050, C365S189120, C365S230080, C365S238500

Reexamination Certificate

active

11134158

ABSTRACT:
A page buffer is provided for an electrically programmable memory that includes multiple memory cells forming multiple memory pages. The page buffer includes a register for at least temporarily storing data read from or to be written to the memory cells of a selected memory page. The register includes multiple latches and multiple buffer elements. Each of the latches is coupled to at least one signal line for transferring the data bit that is stored in the latch. Each of the buffer elements decouples an output of a corresponding one of the latches from the signal line, with the buffer element driving the signal line according to the data bit stored in the corresponding latch. Also provided is a method of transferring data from a register to signal lines in an electrically programmable memory.

REFERENCES:
patent: 5724284 (1998-03-01), Bill et al.
patent: 6278636 (2001-08-01), Lee
patent: 6735116 (2004-05-01), Lee et al.
patent: 2003/0072175 (2003-04-01), Kawamura
patent: 2003/0076719 (2003-04-01), Byeon et al.
patent: 2003/0117856 (2003-06-01), Lee et al.
patent: 2004/0001356 (2004-01-01), Kawamura et al.
patent: 2006/0007774 (2006-01-01), Zanardi et al.
patent: 2006/0039197 (2006-02-01), Khouri et al.
patent: 0 608 075 (1994-07-01), None
Seungjae Lee et al., “A 3.3V 4Gb Four-Level NAND Flash Memory with 90nm CMOS Technology”, ISSCC 2004/Session 2 Non-Volatile Memory/2.7, IEEE International Solid-State Circuits Conference, 2004, XP010722148, ISBN: 0-7803-8267-6.
European search Report for Application EP 04 10 2232 Dated May 2, 2005.

Affiliated with

Also associated with

Rating

Page buffer for a programmable memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Page buffer for a programmable memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Page buffer for a programmable memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3851394