Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-10-23
2007-10-23
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S780000, C257S021000, C438S612000, C438S640000
Reexamination Certificate
active
10962735
ABSTRACT:
Embodiments include a semiconductor device comprising: a pad formed on an insulating layer and having an electric connection region with external components; and a protective insulating layer which has an aperture for exposing the electric connection region. The protective insulating layer may include a first insulating layer and a second insulating layer, and side surfaces of these insulating layers are exposed to the aperture. At least part of the side surfaces surrounding the electric connection region have a tapered configuration at an acute angle to a top surface of the pad. This semiconductor device not only enables reduction of the fabrication steps, but also provides a reliable passivation structure for a pad with sufficient thickness and stress relaxation characteristics.
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Cao Phat X.
Kalam Abul
Konrad Raynes & Victor LLP
Raynes Alan S.
Seiko Epson Corporation
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