Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2007-05-01
2007-05-01
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
C257SE23179, C257SE23015
Reexamination Certificate
active
10776714
ABSTRACT:
A mark-shaped pad. A bonding pad structure with at least one mark-shaped bonding pad comprises: a bottom metal layer disposed over the surface of a rectangular semiconductor substrate to connect the circuit electrically, an inter-metal dielectric layer disposed over the bottom metal layer, metal plugs formed in the inter-metal dielectric layer to connect with the bottom metal layer, a top metal layer disposed over the inter-metal dielectric layer connecting with the metal plugs, and a passivation layer disposed over the top metal layer with openings to expose the top metal layer portions as bonding pads, wherein at least one bonding pad is mark-shaped, e.g. “”, “”, “” or “”, to indicate the orientation of the bonding pads on the rectangular semiconductor substrate.
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Le Thao P.
Merchant & Gould P.C.
Nanya Technology Corporation
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