Pad for accelerated memory test

Details Pad for accelerated memory test Pad for accelerated memory test

1982-05-17

1984-08-14

Levy, Stewart J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324 54, 324 73R, G01R 3100

Patent

active

044659733

ABSTRACT:
In a memory array of capacitive storage cells having first and second polysilicon layers, an accelerated test for defects in insulating layers between substrate and first polysilicon and between first and second polysilicon is made possible by providing a probe pad which is connected to the connection between the first polysilicon and a resistor. The test is further facilitated by replacing the normally diffused resistor by a polysilicon resistor.

REFERENCES:
patent: 4004222 (1977-01-01), Gebhard
"Equipment for Checking Dielectric Losses in Silicon Matrices with Dielectric Material" in Izmeritel'naga Tekhnika, No. 1, pp. 61-62, Jun. 1979, by Oksanich et al.
"Capacitor/Thin-Film Stress Test Circuit" in IBM Tech. Disc., vol. 18, No. 3, pp. 813-814, Aug. 75, by Franco et al.

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