Pad condition and polishing rate monitor using fluorescence

Details Pad condition and polishing rate monitor using fluorescence Pad condition and polishing rate monitor using fluorescence

1994-11-03

1996-01-09

Porta, David P.

X-ray or gamma ray systems or devices

Specific application

Fluorescence

378 50, 451 6, 451 8, 1566261, 1566271, H01L 21306

Patent

active

054835682

ABSTRACT:
The invention is directed to a method for detecting the chemical mechanical polishing rate of a surface of a semi-conductor wafer. In chemical mechanical polishing, a slurry made of abrasive particles suspended in a chemically abrasive liquid is dispensed on the surface of a rotating polishing pad. The wafer to be polished is rotated and lowered into contact with the rotating polishing pad. The method includes directing an X-ray beam at an exposed surface area of the polishing pad, and detecting the intensity of the X-ray fluorescence which results from the beam illuminating the pad. Since both the CMP rate of removal of a wafer surface and the intensity of the X-ray fluorescence are functions of the density of the abrasive particles in the slurry, the CMP rate of removal can be expressed as a function of the density. Accordingly, the detected intensity of the X-ray fluorescence can be converted directly into the CMP rate, without interfering with the CMP process.

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