Pad break-in method for chemical mechanical polishing tool...

Details Pad break-in method for chemical mechanical polishing tool... Pad break-in method for chemical mechanical polishing tool...

2006-07-04

2006-07-04

Nguyen, Dung Van (Department: 3723)

Abrading

Abrading process

Combined abrading

C451S056000, C451S041000

Reexamination Certificate

active

07070484

ABSTRACT:
A chemical mechanical polishing (CMP) method is disclosed in which a new polishing pad is broken-in and conditioned into a steady operating state while using a silica (SiO2) based CMP slurry and where the broken-in and conditioned pad is afterwards used for polishing patterned workpieces (e.g., semiconductor wafers) with a ceria (CeO2) based CMP slurry. The approach shortens break-in time and appears to eliminate a first wafer effect usually seen following break-in with ceria-based CMP slurries.

REFERENCES:
patent: 6135863 (2000-10-01), Zhang et al.
patent: 6241581 (2001-06-01), Miyashita et al.
patent: 2005/0075056 (2005-04-01), Wu et al.

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