Pad and method for chemical mechanical polishing

Details Pad and method for chemical mechanical polishing Pad and method for chemical mechanical polishing

2007-07-26

2011-11-01

Rose, Robert (Department: 3727)

Abrading

Abrading process

Glass or stone abrading

C451S527000, C051S298000

Reexamination Certificate

active

08047899

ABSTRACT:
A method for chemical-mechanical polishing two adjacent structures of a semiconductor device is provided. The method for mechanical polishing comprising: (a) providing a semiconductor device comprising a recess formed in a surface thereof, a first layer formed over the surface, and a second layer filled with the recess and formed on the first layer; and (b) substantially polishing the first and second layer with a pad and a substantially inhibitor-free slurry, wherein the pad comprising a corrosion inhibitor of the second layer.

REFERENCES:
patent: 5733176 (1998-03-01), Robinson et al.
patent: 6039633 (2000-03-01), Chopra
patent: 6932687 (2005-08-01), Agarwal et al.
patent: 2002/0034876 (2002-03-01), Han
patent: 2007/0135030 (2007-06-01), Shih
patent: 1320610 (2007-06-01), None
Xin, Wei et al., Study on the Performances of Polishing Pad in Chemical-Mechanical Polishing, Faculty of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510090, China, Diamond & Abrasives Engineering, Oct. 2004, Serial 143, No. 5.
Taiwanese Office Action in corresponding Taiwanese Application No. 096143290, dated May 30, 2011.

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