Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Patent
1995-12-11
1999-04-06
Arroyo, Teresa M.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
257706, 257705, 257714, 257717, 257723, 257691, 361699, 318768, H01L 2306, H01L 2310, H01L 2334, H01L 2352
Patent
active
058922792
ABSTRACT:
A packaging for high-power devices such as Insulated Gate Bipolar Transistors includes a direct bonded copper substrate (DBC), such as beryllium oxide (BeO), soldered directly to a heat generating surface of the high-power device. The direct bonded copper substrate (DBC) is, in turn, soldered directly to a liquid cooled heatsink (HS). The packaging improves the thermal management of the heat generated by the high-power device, and is applicable for use in a switching circuit for a 3-phase electric traction motor (M). The assembly also provides for improved wirebonding design in order to use each high-power device to its fullest.
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patent: 5371 (1847-12-01), Kagawa
patent: 4965710 (1990-10-01), Pelly et al.
patent: 5293070 (1994-03-01), Burgess et al.
patent: 5398160 (1995-03-01), Umeda
patent: 5463250 (1995-10-01), Nguyen et al.
patent: 5532012 (1996-07-01), Fillion et al.
patent: 5574312 (1996-11-01), Bayerer et al.
"IGBT (Insulated Gate Bipolar Transistor)", from Toshiba Data Book, 1991; GTR Module (IBGT); pp. 38-45.
Arroyo Teresa M.
Northrop Grumman Corporation
Sutcliff Walter G.
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