Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2011-03-29
2011-03-29
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S738000, C257SE23010
Reexamination Certificate
active
07915730
ABSTRACT:
A packaging conductive structure for a semiconductor substrate and a method for manufacturing the structure are provided. The structure comprises an under bump metal (UBM) that overlays a pad of the semiconductor substrate. At least one auxiliary component is disposed on the UBM. Then, a bump conductive layer is disposed thereon and a bump is subsequently formed on the bump conductive layer. Thus, the bump can electrically connect to the pad of the semiconductor substrate through the UBM and the bump conductive layer and can provide better junction buffer capabilities and conductivity.
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ChipMOS Technologies Inc.
Muncy Geissler Olds & Lowe, PLLC
Potter Roy K
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