Packaged semiconductor device with high energy radiation absorbe

Details Packaged semiconductor device with high energy radiation absorbe Packaged semiconductor device with high energy radiation absorbe

1991-04-24

1992-09-22

Jackson, Jr., Jerome

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 74, 357 84, 25037001, 25037014, H01L 3100, H01L 2714

Patent

active

051501805

ABSTRACT:
A packaged semiconductor device includes a semiconductor element for receiving light, a semiconductor package containing the semiconductor element and including leads, optical glass sealing the semiconductor package and protecting the semiconductor element, the optical glass transmitting light and including an element that absorbs high energy radiation. Therefore, radiation such as gamma rays is absorbed by the anti-radiation glass and deterioration of the internal semiconductor element is prevented. A metal frame including a heavy metal radiation shield is provided at the periphery of the antiradiation glass. Thus, scattering of light in the semiconductor package is prevented and the positional deviation of the anti-radiation glass in the semiconductor package is prevented.

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