Packaged semiconductor device including shielded inner walls

Details Packaged semiconductor device including shielded inner walls Packaged semiconductor device including shielded inner walls

1995-07-17

1996-11-12

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257664, 257704, 257703, 257659, 257730, 257790, 257698, H01L 2360, H01L 2312

Patent

active

055743145

ABSTRACT:
A semiconductor device including a metal base; a first ceramic frame bonded to the metal base; a metallization layer for I/O terminals disposed on the first ceramic frame; a second ceramic frame larger than the first ceramic frame and bonded to the first ceramic frame and to the metallization layer; a metal disposed on and covering inner side walls of the first and second ceramic frames, not electrically contacting the metallization layer but electrically contacting the base member; a semiconductor element disposed on the base member within the first ceramic frame, having I/O terminals connected to the metallization layer, and having a grounding terminal connected to the base member; and a cover hermetically sealing the semiconductor element, bonded to the second ceramic frame, and electrically connected to the metal disposed on the inner side walls.

REFERENCES:
patent: 4427991 (1984-01-01), Yamamura et al.
patent: 4698661 (1987-10-01), Bessonneau et al.
patent: 4908694 (1990-03-01), Hidaka et al.
patent: 5031069 (1991-07-01), Anderson
patent: 5367196 (1994-11-01), Mahulikar et al.

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