Patent
1976-10-04
1977-05-10
Wojciechowicz, Edward J.
357 68, H01L 2348, H01L 3902
Patent
active
RE0292184
ABSTRACT:
A packaged semiconductor device for use at ultra-high frequencies is characterized by improved high frequency characteristics as a result of reduced stay capacitance and reduced energy loss. The device includes a dielectric substrate and at least two conductor layers each of which is integral and extends over the top, side, and bottom surfaces of the dielectric substrate. No part of the conductor layer on the top surface overlaps the part on the bottom surface when viewed in a direction normal to the substrate.
REFERENCES:
patent: 3374533 (1968-03-01), Burks et al.
patent: 3483308 (1969-12-01), Wakely
Anazawa Shinzo
Nagasako Isamu
Sando Shigeru
Ueno Seiichi
Nippon Electric Company Limited
Wojciechowicz Edward J.
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