Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-04-04
2010-11-23
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C438S106000, C438S107000, C438S109000, C438S110000, C438S113000, C438S114000, C438S455000, C438S460000, C438S596000, C438S639000, C257S678000, C257S683000, C257S684000, C257S685000, C257S686000, C257S690000, C257S698000, C257SE21166, C257SE21167, C257SE31117
Reexamination Certificate
active
07838983
ABSTRACT:
The present invention connects a first wiring portion located at one side of a substrate and a second wiring portion located at the other side. A side electrode connected to the first wiring portion is formed, and the second wiring portion is formed on an insulating layer formed on the substrate. An exposed end of the second wiring portion formed when singulated into individual semiconductor package and the side electrode are wired by ink jet system using nano metal particles. Particularly, when copper is used, the wiring by the ink jet system is performed by the reduction of a metal surface oxidation film and/or removal of organic matters by atomic hydrogen.
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Kaydanova, T.; Direct Write Contact for Solar Cells; Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE; Jan. 3-7, 2005; p. 1305-1308.
Dulka John P
Kyushu Institute of Technology
McGlew and Tuttle , P.C.
Toledo Fernando L
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