Packaged microelectronic imagers and methods of packaging...

Details Packaged microelectronic imagers and methods of packaging... Packaged microelectronic imagers and methods of packaging...

2009-02-02

2011-10-11

Andujar, Leonardo (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S528000, C257S432000

Reexamination Certificate

active

08035179

ABSTRACT:
Microelectronic imagers, methods for packaging microelectronic imagers, and methods for forming electrically conductive through-wafer interconnects in microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging die can include a microelectronic substrate, an integrated circuit, and an image sensor electrically coupled to the integrated circuit. A bond-pad is carried by the substrate and electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends partially through the substrate and is in contact with the bond-pad. The interconnect can include a passage extending partially through the substrate to the bond-pad, a dielectric liner deposited into the passage and in contact with the substrate, a conductive layer deposited onto at least a portion of the dielectric liner, a wetting agent deposited onto at least a portion of the conductive layer, and a conductive fill material deposited into the passage and electrically coupled to the bond-pad.

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