Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-09-27
2010-12-28
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S070000, C438S098000, C438S193000
Reexamination Certificate
active
07858429
ABSTRACT:
Microelectronic imagers, methods for packaging microelectronic imagers, and methods for forming electrically conductive through-wafer interconnects in microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging die can include a microelectronic substrate, an integrated circuit, and an image sensor electrically coupled to the integrated circuit. A bond-pad is carried by the substrate and electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the substrate and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad, a dielectric liner deposited into the passage and in contact with the substrate, first and second conductive layers deposited onto at least a portion of the dielectric liner, and a conductive fill material deposited into the passage over at least a portion of the second conductive layer and electrically coupled to the bond-pad.
REFERENCES:
patent: 3345134 (1967-10-01), Heymer et al.
patent: 4534100 (1985-08-01), Lane
patent: 4906314 (1990-03-01), Farnworth et al.
patent: 5130783 (1992-07-01), McLellan
patent: 5371397 (1994-12-01), Maegawa et al.
patent: 5424573 (1995-06-01), Kato et al.
patent: 5435887 (1995-07-01), Rothschild et al.
patent: 5505804 (1996-04-01), Mizuguchi et al.
patent: 5593913 (1997-01-01), Aoki
patent: 5605783 (1997-02-01), Revelli et al.
patent: 5672519 (1997-09-01), Song et al.
patent: 5694246 (1997-12-01), Aoyama et al.
patent: 5708293 (1998-01-01), Ochi et al.
patent: 5771158 (1998-06-01), Yamagishi et al.
patent: 5776824 (1998-07-01), Farnworth et al.
patent: 5811799 (1998-09-01), Wu
patent: 5821532 (1998-10-01), Beaman et al.
patent: 5857963 (1999-01-01), Pelchy et al.
patent: 5861654 (1999-01-01), Johnson
patent: 5877040 (1999-03-01), Park et al.
patent: 5897338 (1999-04-01), Kaldenberg
patent: 5914488 (1999-06-01), Sone
patent: 5977535 (1999-11-01), Rostoker
patent: 5998862 (1999-12-01), Yamanaka
patent: 6080291 (2000-06-01), Woodruff et al.
patent: 6104086 (2000-08-01), Ichikawa et al.
patent: 6114240 (2000-09-01), Akram et al.
patent: 6143588 (2000-11-01), Glenn
patent: 6235554 (2001-05-01), Akram et al.
patent: 6236046 (2001-05-01), Watabe et al.
patent: 6259083 (2001-07-01), Kimura
patent: 6266197 (2001-07-01), Glenn et al.
patent: 6274927 (2001-08-01), Glenn
patent: 6285064 (2001-09-01), Foster
patent: 6667551 (2001-10-01), Hanaoka et al.
patent: 6351027 (2002-02-01), Giboney et al.
patent: 6372548 (2002-04-01), Bessho et al.
patent: 6407381 (2002-06-01), Glenn et al.
patent: 6411439 (2002-06-01), Nishikawa
patent: 6483652 (2002-11-01), Nakamura
patent: 6503780 (2003-01-01), Glenn et al.
patent: 6534863 (2003-03-01), Walker et al.
patent: 6541762 (2003-04-01), Knag et al.
patent: 6560047 (2003-05-01), Kim et al.
patent: 6566745 (2003-05-01), Beyne et al.
patent: 6603183 (2003-08-01), Hoffman
patent: 6617623 (2003-09-01), Rhodes
patent: 6661047 (2003-12-01), Rhodes
patent: 6670986 (2003-12-01), Shoshan et al.
patent: 6686588 (2004-02-01), Webster et al.
patent: 6703310 (2004-03-01), Mashino et al.
patent: 6703689 (2004-03-01), Wada
patent: 6864172 (2004-04-01), Noma et al.
patent: 6734419 (2004-05-01), Glenn et al.
patent: 6759266 (2004-07-01), Hoffman
patent: 6774486 (2004-08-01), Kinsman
patent: 6778046 (2004-08-01), Stafford et al.
patent: 6791076 (2004-09-01), Webster
patent: 6795120 (2004-09-01), Takagi et al.
patent: 6797616 (2004-09-01), Kinsman
patent: 6800943 (2004-10-01), Adachi
patent: 6813154 (2004-11-01), Diaz et al.
patent: 6825458 (2004-11-01), Moess et al.
patent: 6828663 (2004-12-01), Chen et al.
patent: 6828674 (2004-12-01), Karpman
patent: 6844978 (2005-01-01), Harden et al.
patent: 6882021 (2005-04-01), Boon et al.
patent: 6885107 (2005-04-01), Kinsman
patent: 6934065 (2005-08-01), Kinsman
patent: 6946325 (2005-09-01), Yean et al.
patent: 2002/0006687 (2002-01-01), Lam
patent: 2002/0019069 (2002-02-01), Wada
patent: 2002/0057468 (2002-05-01), Segawa et al.
patent: 2002/0089025 (2002-07-01), Chou
patent: 2002/0096729 (2002-07-01), Tu et al.
patent: 2002/0113296 (2002-08-01), Cho et al.
patent: 2002/0145676 (2002-10-01), Kuno et al.
patent: 2003/0062601 (2003-04-01), Harnden et al.
patent: 2004/0012698 (2004-01-01), Suda et al.
patent: 2004/0023469 (2004-02-01), Suda
patent: 2004/0038442 (2004-02-01), Kinsman
patent: 2004/0041261 (2004-03-01), Kinsman
patent: 2004/0082094 (2004-04-01), Yamamoto
patent: 2004/0214373 (2004-10-01), Jiang et al.
patent: 2004/0245649 (2004-12-01), Imaoka
patent: 2005/0029643 (2005-02-01), Koyanagi
patent: 2005/0052751 (2005-03-01), Liu et al.
patent: 2005/0104228 (2005-05-01), Rigg et al.
patent: 2005/0110889 (2005-05-01), Tuttle et al.
patent: 2005/0127478 (2005-06-01), Hiatt et al.
patent: 2005/0151228 (2005-07-01), Tanida et al.
patent: 2005/0236708 (2005-10-01), Farnworth et al.
patent: 2005/0254133 (2005-11-01), Akram et al.
patent: 2005/0275048 (2005-12-01), Farnworth et al.
patent: 2005/0275750 (2005-12-01), Akram et al.
patent: 0 886 323 (1998-12-01), None
patent: 1 157 967 (2001-11-01), None
patent: 2 835 654 (2003-08-01), None
patent: 59-101882 (1984-06-01), None
patent: 59-191388 (1984-10-01), None
patent: 07-263607 (1995-10-01), None
patent: 2001-077496 (2001-03-01), None
patent: WO 90/05424 (1990-05-01), None
patent: WO 02/075815 (2002-09-01), None
patent: WO 02/095796 (2002-11-01), None
patent: WO/03/041174 (2003-05-01), None
patent: WO 2004/054001 (2004-06-01), None
U.S. Appl. No. 10/785,466, Kirby.
U.S. Appl. No. 10/845,304, Jiang et al.
U.S. Appl. No. 10/857,948, Boettiger et al.
U.S. Appl. No. 10/863,994, Akram et al.
U.S. Appl. No. 10/864,974, Kirby et al.
U.S. Appl. No. 10/867,352, Farnworth et al.
U.S. Appl. No. 10/867,505, Farnworth et al.
U.S. Appl. No. 10/879,838, Kirby et al.
U.S. Appl. No. 10/893,022, Hall et al.
U.S. Appl. No. 10/894,262, Farnworth et al.
U.S. Appl. No. 10/901,851, Derderian et al.
U.S. Appl. No. 10/910,491, Bolken et al.
U.S. Appl. No. 10/915,180, Street et al.
U.S. Appl. No. 10/919,604, Farnworth et al.
U.S. Appl. No. 10/922,177, Oliver et al.
U.S. Appl. No. 10/922,192, Farnworth.
U.S. Appl. No. 10/925,406, Oliver.
U.S. Appl. No. 10/925,501, Oliver.
U.S. Appl. No. 10/925,502, Watkins et al.
U.S. Appl. No. 10/927,550, Derderian et al.
U.S. Appl. No. 10/927,760, Chong et al.
U.S. Appl. No. 10/928,598, Kirby.
U.S. Appl. No. 10/932,296, Oliver et al.
U.S. Appl. No. 11/027,443, Kirby.
U.S. Appl. No. 11/054,692, Boemler.
U.S. Appl. No. 11/056,211, Hembree et al.
U.S. Appl. No. 11/056,484, Boettiger et al.
U.S. Appl. No. 11/061,034, Boettiger.
U.S. Appl. No. 11/146,783, Tuttle et al.
U.S. Appl. No. 11/169,546, Sulfridge.
U.S. Appl. No. 11/169,838, Sulfridge.
U.S. Appl. No. 11/177,905, Akram.
U.S. Appl. No. 11/209,524, Akram.
U.S. Appl. No. 11/217,169, Hiatt et al.
U.S. Appl. No. 11/217,877, Oliver et al.
Aachboun and Ranson, “Cryogenic etching of deep narrow trenches in silicon,” J. Vac. Sci. Technol. A 18(4), Jul./Aug. 2000, pp. 1848-1852.
Aachboun and Ranson, “Deep anisotropic etching of silicon,” J. Vac. Sci. Technol. A 17(4), Jul./Aug. 1999, pp. 2270-2273.
Austin and Chou, “Fabrication of 70 nm channel length polymer organic thin-film transistors using nanoimprint lithography,” Applied Physics Letters, vol. 81, No. 23, pp. 4431-4433, Dec. 2, 2002, American Institute of Physics.
U.S. Appl. No. 11/218,126, Farnworth et al.
U.S. Appl. No. 11/218,243, Kirby et al.
Blackburn et al., “Deposition of Conformal Copper and Nickel Films from Supercritical Carbon Dioxide,” Science, vol. 294, pp. 141-145, Oct. 5, 2001.
Brubaker et al., “Ultra-thick Litghography for Advanced Packaging and MEMS,” SPIE's 27th Annual International Symposium on Microlithography 2002, Mar. 3-8, 2002, Santa Clara, CA.
Cheng et al., “Vacuum Packaging Technology Using Localized Aluminum/Silicon-to-Glass Bonding,” Journal of Microelectromechanical Systems, vol. 11, No. 5, pp. 556-565, Oct. 2002.
DuPont Electronic Materials, Data Sheet,
Akram Salman
Hiatt William M.
Kirby Kyle K.
Watkins Charles M.
Wood Alan G.
Lerner David Littenberg Krumholz & Mentlik LLP
Perkins Pamela E
Round Rock Research, LLC
Smith Zandra
LandOfFree
Packaged microelectronic imagers and methods of packaging... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Packaged microelectronic imagers and methods of packaging..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Packaged microelectronic imagers and methods of packaging... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4214359