Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-05-10
2011-05-10
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S678000, C257S710000, C257S704000, C257S729000
Reexamination Certificate
active
07939932
ABSTRACT:
A low-temperature inorganic dielectric ALD film (e.g., Al2O3and TiO2) is deposited on a packaged or unpackaged chip device so as to coat the device including any exposed electrical contacts. Such a low-temperature ALD film generally can be deposited without damaging the packaged chip device. The ALD film is typically deposited at a sufficient thickness to provide desired qualities (e.g., hermeticity for the entire packaged chip device, passivation for the electrical contacts, biocompatibility, etc.) but still allow for electrical connections to be made to the electrical contacts (e.g., by soldering or otherwise) directly through the ALD film without having to expose the electrical contacts.
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Analog Devices Inc.
Le Thao X
Sunstein Kann Murphy & Timbers LLP
Tran Thanh Y
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