Package structure of compound semiconductor device and...

Details Package structure of compound semiconductor device and... Package structure of compound semiconductor device and...

2011-02-22

2011-02-22

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S684000, C257S687000, C257S689000, C257S692000

Reexamination Certificate

active

07893528

ABSTRACT:
A package structure of a compound semiconductor device comprises a thin film substrate, a die, at least one metal wire and a transparent encapsulation material. The thin film substrate comprises a first conductive film, a second conductive film, and an insulating dielectric material. The die is mounted on the surface of the first conductive film, and is electrically connected to the first conductive film and the second conductive film through the metal wire. The transparent encapsulation material overlays the first conductive film, second conductive film, and die. The surfaces of the first conductive film and second conductive film which is opposite the transparent encapsulation material act as electrodes. The insulating dielectric material is between the first conductive film and second conductive film.

REFERENCES:
patent: 7276782 (2007-10-01), Wang et al.
patent: 2004/0090756 (2004-05-01), Ho et al.
patent: 2005/0139855 (2005-06-01), Wang et al.
patent: 2009/0026470 (2009-01-01), Lai et al.
patent: 1523681 (2004-08-01), None
patent: 2000-77725 (2000-03-01), None
patent: 2006-156704 (2006-06-01), None

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