Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2002-01-16
2004-08-24
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S107000, C438S113000, C438S124000
Reexamination Certificate
active
06780668
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Technical Field
The present invention relates to a semiconductor device package manufacturing method capable of mounting a semiconductor device with high density, a small thickness, high productivity, and high reliability, an electronic component module manufacturing method, a noncontact IC card manufacturing method, utilizing the method, a semiconductor device package manufactured by the semiconductor device package manufacturing method, a method for manufacturing a semiconductor device-mounted component such as a semiconductor device package and an electronic component module, a method for manufacturing a semiconductor device-mounted finished-product utilizing the semiconductor device-mounted component manufacturing method and a semiconductor device-mounted finished-product manufactured by the semiconductor device-mounted finished-product manufacturing method.
2. Description of the Related Art
The conventional semiconductor device package will be described with reference to FIG.
18
through FIG.
21
.
FIG. 20A
,
FIG. 20B
,
FIG. 20C
, FIG.
20
D and
FIG. 21
show the manufacturing method process by process.
FIG. 19
shows a process chart.
First of all, in step S
101
of
FIG. 19
, dicing of a wafer is performed, and thereafter, a bump
104
is formed by the wire bonding method on each element electrode
105
of a semiconductor device
103
in step S
102
as shown in FIG.
20
A. The reference numeral
106
denotes a passivation film for protecting the active surface of the semiconductor device
103
.
Next, in step S
103
, as shown in
FIG. 20B
, a conductive adhesive
116
is formed on the bump
104
by a transfer method. For the conductive adhesive
116
, an epoxy-based adhesive, which include particles of Ag, Cu, or the like as a filler, is principally employed.
Next, in step S
104
, as shown in
FIG. 20C
, the semiconductor device
103
is mounted so that the bumps
104
of the semiconductor device
103
are electrically connected to the electrodes
117
of a circuit board
115
formed of ceramic, glass epoxy, or the like, and the conductive adhesive
116
is thermally hardened in step S
105
. The standard hardening conditions of the conductive adhesive
116
are 140° C. for 20 minutes.
Next, in step S
106
, as shown in
FIG. 20D
, a space between the semiconductor device
103
and the circuit board
115
is filled with an encapsulant
121
for securing reliability by a dispenser
122
, and thermosetting is performed in step S
107
. The average conditions of the thermosetting are 140° C. for four hours.
Next, in step S
108
, as shown in
FIG. 21
, a solder paste
120
is printed on electrodes
118
formed on the side that belongs to the circuit board
115
and are opposite from the mounting surface of the semiconductor device
103
, and thereafter, metallic particles
119
of Au, Cu, Ag, or the like are mounted in step S
109
and made to pass through a reflow furnace in step S
110
, obtaining a semiconductor device package as shown in FIG.
18
.
The semiconductor device package shown in
FIG. 18
is thus completed through the processes of step S
101
to step S
110
.
However, according to the above-mentioned conventional semiconductor device package manufacturing method and structure, there has been the issue that the productivity is low because many processes are needed and much time is necessary for the hardening of the conductive adhesive
116
and the encapsulant
121
. Moreover, the circuit board
115
has a thickness of about 0.5 mm, and a total thickness of the semiconductor package becomes about 1 mm including the thickness of the semiconductor device
103
. This structure has had difficulties in being reduced in thickness and the issue that the package cannot be applied to a commodity, which is restricted to a thickness of not greater than 0.76 mm as in, for example, a noncontact IC card.
Accordingly, the object of the present invention is to solve the aforementioned issues and provide a thin type semiconductor device package manufacturing method with high quality and high productivity, an electronic component module manufacturing method, a noncontact IC card manufacturing method, utilizing the semiconductor device package manufacturing method, a semiconductor device package manufactured by the semiconductor device package manufacturing method, a method for manufacturing a semiconductor device-mounted component such as a semiconductor device package and an electronic component module, a method for manufacturing a semiconductor device-mounted finished-product utilizing the semiconductor device-mounted component manufacturing method and a semiconductor device-mounted finished-product manufactured by the semiconductor device-mounted finished-product manufacturing method.
SUMMARY OF THE INVENTION
In order to achieve the aforementioned object, the present invention is constructed as follows.
According to a first aspect of the present invention, there is provided a semiconductor device package manufacturing method comprising:
forming bumps on element electrodes of a semiconductor device by a wire bonding method;
positioning the semiconductor device on a thermoplastic resin sheet;
forming a thermoplastic resin portion for covering a portion of the semiconductor device except for end surfaces of the bumps by melting the thermoplastic resin sheet through hot pressing of the thermoplastic resin sheet and the semiconductor device; and
cutting the thermoplastic resin portion after the hot pressing.
According to a second aspect of the present invention, there is provided a semiconductor device package manufacturing method comprising:
forming by a wire bonding method a bump on an element electrode of a semiconductor device of an individual piece obtained by dicing a semiconductor wafer;
positioning one or a plurality of the semiconductor devices on a thermoplastic resin sheet;
forming a thermoplastic resin portion for covering a portion of the semiconductor device except for an end surface of the bump by melting the thermoplastic resin sheet through hot pressing of the thermoplastic resin sheet and each individual piece of the semiconductor device; and
cutting the thermoplastic resin portion after the hot pressing.
According to a third aspect of the present invention, there is provided a semiconductor device package manufacturing method comprising:
forming bumps on semiconductor device electrodes of a semiconductor wafer by a wire bonding method;
dicing the semiconductor wafer on which the bump is formed to divide the wafer into each individual piece of a semiconductor device;
positioning one or a plurality of the semiconductor devices on a thermoplastic resin sheet;
forming a thermoplastic resin portion for covering a portion of the semiconductor device except for end surfaces of the bumps by melting the thermoplastic resin sheet through hot pressing of the thermoplastic resin sheet and each individual piece of the semiconductor device; and
cutting the thermoplastic resin portion after the hot pressing.
According to a fourth aspect of the present invention, there is provided a semiconductor device package manufacturing method comprising:
forming bumps on element electrodes of a semiconductor wafer by a wire bonding method;
positioning a thermoplastic resin sheet on the semiconductor wafer;
forming a thermoplastic resin portion for covering a portion of the semiconductor device except for end surfaces of the bumps by melting the thermoplastic resin sheet through hot pressing of the semiconductor wafer and the thermoplastic resin sheet; and
dicing the semiconductor wafer and the thermoplastic resin portion, which have undergone the hot pressing.
According to a fifth aspect of the present invention, there is provided a semiconductor device package manufacturing method comprising:
printing a circuit pattern with a conductive paste in a thermoplastic resin portion that is located on an end surface side where the bump is exposed and belongs to a semiconductor device package manufactured by the semiconductor device package manufacturing method defin
Akiguchi Takashi
Miyakawa Hidenori
Tsukahara Norihito
Everhart Caridad
Matsushita Electric - Industrial Co., Ltd.
Wenderoth , Lind & Ponack, L.L.P.
LandOfFree
Package of semiconductor device and method of manufacture... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Package of semiconductor device and method of manufacture..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Package of semiconductor device and method of manufacture... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3292632