Package of semiconductor device and its manufacturing method

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...

Reexamination Certificate

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C257S730000, C257S780000

Reexamination Certificate

active

07053479

ABSTRACT:
A packaged semiconductor device structure comprises a semiconductor chip (20) having a bump electrode (5), a facing substrate (9) having on one face thereof a facing electrode (8) contacting an end face of the bump electrode (5) and a bonding agent (7) filled in between the semiconductor chip (20) and the facing substrate (9). The bump electrode (5) is of a double layer structure composed of a core part (5b) and a convex-shaped electrode end part (5a) fabricated above the core part (5b) separately from the core part.

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International Preliminary Report (PCT/IPEA/409) (translated) issued for PCT/JP02/02836.
Notification of Transmittal of Copies of Translation of the International Preliminary Examination Report (PCT/IB/338) issued for PCT/JP02/02836.
First Examination Report - Chinese Patent Office with partial translation.

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